2SC3075_06 СПК, схеми, функції
Частина Ім'я: 2SC3075_06
Виробник: Toshiba Semiconductor
Упаковка:
Опис:
Штифти:
Температура: Мінімум °C | Макс °C
Розмір: KB
- 2SC3070
High-hFE, Low-Frequency General-Purpose Applications - 2SC3071
Epitaxial Planar Silicon Transistor - 2SC3072
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS - 2SC3072A
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3072B
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3072C
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3073
SILICON EPITAXIAL TYPE(PCT PROCESS) - 2SC3074
HIGH CURRENT SWITCHING APPLICATIONS - 2SC3074O
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251 - 2SC3074Y
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251 - 2SC3075
TRANSISTOR (SWITCHING REGULATOR HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) - 2SC307506
Silicon Triple Diffused Type process) Switching Regulator High Voltage Switching - 2SC3075_06
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching - 2SC3076
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS - 2SC3076O
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-251AA