BDS11IG СПК, схеми, функції
Частина Ім'я: BDS11IG
Виробник: SEME-LAB[Seme
Упаковка:
Опис: to257
Штифти:
Температура: Мінімум °C | Макс °C
Розмір: KB
- BDS10
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS10IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS10SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS10SMD05
NPN - BDS11
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS11CECC
NPN - BDS11IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS11SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS11SMD05
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 15A I(C) | SMT - BDS12
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS12CECC
NPN - BDS12IG
SILICON EPITAXIAL BASE TO257 METAL PACKAGE - BDS12SMD
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES - BDS12SMD05
NPN - BDS13
SILICON EPITAXIAL BASE TO220 METAL SMD1 CERAMIC SURFACE MOUNT PACKAGES